features trenchfet power mosfet 175 c junction temperature optimized for low-side synchronous rectifier 100% r g tested applications desktop or server cpu core sum110n03-03p vishay siliconix document number: 71964 s-32523?rev. b, 08-dec-03 www.vishay.com 1 n-channel 30-v (d-s) 175 c mosfet product summary v (br)dss (v) r ds(on) ( ) i d (a) a 30 0.0026 @ v gs = 10 v 110 a 30 0.004 @ v gs = 4.5 v 110 a d g s n-channel mosfet drain connected to tab to-263 s d g top view ordering information: sum110n03-03p SUM110N03-03P-E3 (lead free) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 110 a c on ti nuous d ra i n c urren t (t j = 175 c) t c = 100 c i d 110 a a pulsed drain current i dm 400 a avalanche current i ar 65 repetitive a valanche energy b l = 0.1 mh e ar 211 mj maximum power dissipation b t c = 25 c (to-220ab and to-263) p d 375 c w maximum power dissipation b t a = 25 c (to-263) d p d 3.75 w operating junction and storage temperature range t j , t stg ? 55 to 175 c thermal resistance ratings parameter symbol limit unit jtitabit pcb mount (to-263) d r 40 junction-to-ambient free air (to-220ab) r thja 62.5 c/w junction-to-case r thjc 0.4 c/w notes a. package limited. b. duty cycle 1%. c. see soa curve for voltage derating. d. when mounted on 1? square pcb (fr-4 material).
sum110n03-03p vishay siliconix www.vishay.com 2 document number: 71964 s-32523?rev. b, 08-dec-03 specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 30 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 2 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 30 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 125 c 50 a g dss v ds = 30 v, v gs = 0 v, t j = 175 c 250 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 120 a v gs = 10 v, i d = 30 a 0.002 0.0026 drain source on state resistance a r v gs = 10 v, i d = 30 a, t j = 125 c 0.004 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 30 a, t j = 175 c 0.005 v gs = 4.5 v, i d = 20 a 0.0031 0.004 forward transconductance a g fs v ds = 15 v, i d = 30 a 20 s dynamic b input capacitance c iss 12100 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1910 pf reverse transfer capacitance c rss 1250 total gate charge b q g 172 250 gate-source charge b q gs v ds = 15 v, v gs = 10 v, i d = 110 a 40 nc gate-drain charge b q gd ds , gs , d 22 gate resistance r g 0.3 1.3 1.9 turn-on delay time b t d(on) 20 35 rise time b t r v dd = 15 v, r l = 0.18 20 35 ns turn-off delay time b t d(off) v dd = 15 v , r l = 0 . 18 i d 110 a, v gen = 10 v, r g = 2.5 90 140 ns fall time b t f 25 40 source-drain diode ratings and characteristics (t c = 25 c) c continuous current i s 85 a pulsed current i sm 440 a forward voltage a v sd i f = 110 a, v gs = 0 v 1.1 1.5 v reverse recovery time t rr 60 120 ns peak reverse recovery current i rm i f = 85 a, di/dt = 100 a/ s 3.5 5 a reverse recovery charge q rr f 0.1 0.3 c notes a. pulse test; pulse width 300 s, duty cycle 2%. b. independent of operating temperature. c. guaranteed by design, not subject to production testing.
sum110n03-03p vishay siliconix document number: 71964 s-32523?rev. b, 08-dec-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0 3000 6000 9000 12000 15000 0 6 12 18 24 30 0 2 4 6 8 10 0 30 60 90 120 150 180 0 50 100 150 200 250 0 102030405060708090 0.0000 0.0015 0.0030 0.0045 0.0060 0 20 40 60 80 100 120 0 40 80 120 160 200 012345 0 50 100 150 200 250 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? transconductance (s) g fs 25 c ? 55 c 3 v t c = 125 c v ds = 15 v i d = 85 a v gs = 10 thru 5 v v gs = 10 v c iss c oss t c = ? 55 c 25 c 125 c 4 v v gs = 4.5 v ? on-resistance ( r ds(on) ) ? drain current (a) i d i d ? drain current (a) c rss
sum110n03-03p vishay siliconix www.vishay.com 4 document number: 71964 s-32523?rev. b, 08-dec-03 typical characteristics (25 c unless noted) drain source breakdown vs. junction t emperature 0.0 0.4 0.8 1.2 1.6 2.0 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c (normalized) ? on-resistance ( r ds(on) ) 0 30 32 34 36 38 40 ? 50 ? 25 0 25 50 75 100 125 150 175 t j ? junction temperature ( c) (v) v (br)dss i d = 10 ma
sum110n03-03p vishay siliconix document number: 71964 s-32523?rev. b, 08-dec-03 www.vishay.com 5 thermal ratings 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 safe operating area v ds ? drain-to-source voltage (v) 1000 10 0.1 1 10 100 limited by r ds(on) 0.1 100 t c = 25 c single pulse maximum avalanche and drain current vs. case t emperature t c ? ambient t emperature ( c) ? drain current (a) i d normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 3 10 ? 2 10 ? 1 1 normalized effective transient thermal impedance 10 0.2 0.1 duty cycle = 0.5 ? drain current (a) i d 1 ms 10 ms 100 ms dc 10 s 100 s single pulse 0.05 0.02 1 10 ? 4
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